HGT007NE6A Datasheet. Specs and Replacement

Type Designator: HGT007NE6A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 360 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 6011 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00075 Ohm

Package: TOLL

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HGT007NE6A datasheet

 ..1. Size:992K  cn hunteck
 hgt007ne6a.pdf pdf_icon

HGT007NE6A

P-1 HGT007NE6A 65V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 65 V VDS Enhanced Body diode dv/dt capability 0.62 RDS(on),typ mW Enhanced Avalanche Ruggedness 674 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 360 A ID (Package Limited) Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Ci... See More ⇒

 9.1. Size:990K  cn hunteck
 hgt009n08a.pdf pdf_icon

HGT007NE6A

P-1 HGT009N08A 80V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 80 V VDS Enhanced Body diode dv/dt capability 0.75 RDS(on),typ mW Enhanced Avalanche Ruggedness 585 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 360 A ID (Package Limited) Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Ci... See More ⇒

Detailed specifications: HGS230N10AL, HGS290N10SL, HGS380N12S, HGS480N15M, HGS650N15S, HGS650N15SL, HGS750N15M, HGS750N15ML, IRF640N, HGT009N08A, HGT015N10S, HGT016NE6A, HGT019N08A, HGT022N12S, HGT025N10A, HGT035N12S, HGT041N15S

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