All MOSFET. HGT025N10A Datasheet

 

HGT025N10A Datasheet and Replacement


   Type Designator: HGT025N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 341 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 240 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 114 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TOLL
 

 HGT025N10A substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGT025N10A Datasheet (PDF)

 ..1. Size:1221K  cn hunteck
 hgt025n10a.pdf pdf_icon

HGT025N10A

HGT025N10AP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching 1.97RDS(on),typ mW Enhanced Body diode dv/dt capability 258 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 240 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Sw

 9.1. Size:984K  cn hunteck
 hgt022n12s.pdf pdf_icon

HGT025N10A

HGT022N12S P-1120V N-Ch Power MOSFETFeature High Speed Power Switching120 VVDS Enhanced Body diode dv/dt capability1.8RDS(on),typ mW Enhanced Avalanche Ruggedness341 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/D

Datasheet: HGS750N15M , HGS750N15ML , HGT007NE6A , HGT009N08A , HGT015N10S , HGT016NE6A , HGT019N08A , HGT022N12S , IRFB4110 , HGT035N12S , HGT041N15S , HGT055N15S , HGW053N06SL , HGW055N10SL , HGW059N12S , HGW059N12SL , HGW100N12S .

History: RSD140P06 | PH1955L | AP2N7002K-HF | FTK830F | WFF630 | HCD6NC70S | AOB298L

Keywords - HGT025N10A MOSFET datasheet

 HGT025N10A cross reference
 HGT025N10A equivalent finder
 HGT025N10A lookup
 HGT025N10A substitution
 HGT025N10A replacement

 

 
Back to Top

 


 
.