HGW190N15S Datasheet and Replacement
Type Designator: HGW190N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 79 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO-262
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HGW190N15S Datasheet (PDF)
hgw190n15s.pdf

HGW190N15S P-1150V N-Ch Power MOSFET150 VVDSFeatureTO-262 16RDS(on),typ m Optimized for high speed smooth switching79 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and High Speed CircuitPi
hgw190n15sl.pdf

HGW190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 69 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and H
hgw195n15s.pdf

HGW195N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching16RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability59 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitTO
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - HGW190N15S MOSFET datasheet
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History: VBNC1303 | IRFS4010PBF



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