All MOSFET. HGW190N15S Datasheet

 

HGW190N15S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGW190N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 79 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-262

 HGW190N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGW190N15S Datasheet (PDF)

 ..1. Size:772K  cn hunteck
 hgw190n15s.pdf

HGW190N15S HGW190N15S

HGW190N15S P-1150V N-Ch Power MOSFET150 VVDSFeatureTO-262 16RDS(on),typ m Optimized for high speed smooth switching79 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and High Speed CircuitPi

 0.1. Size:775K  cn hunteck
 hgw190n15sl.pdf

HGW190N15S HGW190N15S

HGW190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 69 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and H

 9.1. Size:934K  cn hunteck
 hgw195n15s.pdf

HGW190N15S HGW190N15S

HGW195N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching16RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability59 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitTO

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