HGW190N15S Datasheet. Specs and Replacement
Type Designator: HGW190N15S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 79 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 165 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO-262
HGW190N15S substitution
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HGW190N15S datasheet
hgw190n15s.pdf
HGW190N15S P-1 150V N-Ch Power MOSFET 150 V VDS Feature TO-262 16 RDS(on),typ m Optimized for high speed smooth switching 79 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching and High Speed Circuit Pi... See More ⇒
hgw190n15sl.pdf
HGW190N15SL P-1 150V N-Ch Power MOSFET 150 V VDS Feature 16.0 RDS(on),typ VGS=10V m Optimized for high speed smooth 19 RDS(on),typ VGS=4.5V m switching,Logic level 69 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion Drain Hard Switching and H... See More ⇒
hgw195n15s.pdf
HGW195N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 16 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 59 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit TO... See More ⇒
Detailed specifications: HGW055N10SL, HGW059N12S, HGW059N12SL, HGW100N12S, HGW100N12SL, HGW105N15M, HGW105N15SL, HGW130N12S, IRF9540N, HGW190N15SL, HGW195N15S, HTA1K2P10, HTB025N03, HTD025N03, HTD035N03, HTD040N03, HTD058N03R
Keywords - HGW190N15S MOSFET specs
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