HTA1K2P10 Datasheet. Specs and Replacement

Type Designator: HTA1K2P10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO-220F

HTA1K2P10 substitution

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HTA1K2P10 datasheet

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HTA1K2P10

HTA1K2P10 P-1 100V P-Ch Power MOSFET Feature -100 V VDS High Speed Power Switching, Logic Level 105 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness -22 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor TO-220F Drain Gate Part Number Pac... See More ⇒

Detailed specifications: HGW100N12S, HGW100N12SL, HGW105N15M, HGW105N15SL, HGW130N12S, HGW190N15S, HGW190N15SL, HGW195N15S, AO3401, HTB025N03, HTD025N03, HTD035N03, HTD040N03, HTD058N03R, HTD060N03, HTD070N04, HTD080P03

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.