HTA1K2P10 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTA1K2P10
Marking Code: TA1K2P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58 nC
trⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-220F
HTA1K2P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTA1K2P10 Datasheet (PDF)
..1. Size:572K cn hunteck
hta1k2p10.pdf
hta1k2p10.pdf
HTA1K2P10P-1100V P-Ch Power MOSFETFeature-100 VVDS High Speed Power Switching, Logic Level105RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness-22 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-220FDrainGatePart Number Pac
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