All MOSFET. HTB025N03 Datasheet

 

HTB025N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTB025N03
   Marking Code: TB025N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 88 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 880 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-263

 HTB025N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTB025N03 Datasheet (PDF)

 ..1. Size:755K  cn hunteck
 htb025n03.pdf

HTB025N03 HTB025N03

HTB025N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, logic Level2.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness137 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectification

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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