HTB025N03 Datasheet. Specs and Replacement

Type Designator: HTB025N03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 880 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO-263

HTB025N03 substitution

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HTB025N03 datasheet

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HTB025N03

HTB025N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, logic Level 2.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 2.3 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 137 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectification ... See More ⇒

Detailed specifications: HGW100N12SL, HGW105N15M, HGW105N15SL, HGW130N12S, HGW190N15S, HGW190N15SL, HGW195N15S, HTA1K2P10, K3569, HTD025N03, HTD035N03, HTD040N03, HTD058N03R, HTD060N03, HTD070N04, HTD080P03, HTD090N03

Keywords - HTB025N03 MOSFET specs

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