All MOSFET. HTB025N03 Datasheet

 

HTB025N03 Datasheet and Replacement


   Type Designator: HTB025N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 880 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-263
 

 HTB025N03 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HTB025N03 Datasheet (PDF)

 ..1. Size:755K  cn hunteck
 htb025n03.pdf pdf_icon

HTB025N03

HTB025N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, logic Level2.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness137 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectification

Datasheet: HGW100N12SL , HGW105N15M , HGW105N15SL , HGW130N12S , HGW190N15S , HGW190N15SL , HGW195N15S , HTA1K2P10 , 12N60 , HTD025N03 , HTD035N03 , HTD040N03 , HTD058N03R , HTD060N03 , HTD070N04 , HTD080P03 , HTD090N03 .

History: HTA1K2P10

Keywords - HTB025N03 MOSFET datasheet

 HTB025N03 cross reference
 HTB025N03 equivalent finder
 HTB025N03 lookup
 HTB025N03 substitution
 HTB025N03 replacement

 

 
Back to Top

 


 
.