All MOSFET. HTD025N03 Datasheet

 

HTD025N03 Datasheet and Replacement


   Type Designator: HTD025N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 880 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-252
 

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HTD025N03 Datasheet (PDF)

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HTD025N03

HTD025N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, logic Level2.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness134 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead FreeApplication Synchronous Rectification i

Datasheet: HGW105N15M , HGW105N15SL , HGW130N12S , HGW190N15S , HGW190N15SL , HGW195N15S , HTA1K2P10 , HTB025N03 , 4435 , HTD035N03 , HTD040N03 , HTD058N03R , HTD060N03 , HTD070N04 , HTD080P03 , HTD090N03 , HTD140N03 .

History: STP20NE06LFP | AM2332N | CHM2313QGP | IXTT170N10P | KU045N10P | APT8014JLL | 2N6764JANTXV

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