HTD025N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD025N03
Marking Code: TD025N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 88 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 880 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO-252
HTD025N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD025N03 Datasheet (PDF)
..1. Size:815K cn hunteck
htd025n03.pdf
htd025n03.pdf
HTD025N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, logic Level2.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability2.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness134 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead FreeApplication Synchronous Rectification i
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