All MOSFET. HTD058N03R Datasheet

 

HTD058N03R Datasheet and Replacement


   Type Designator: HTD058N03R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 152 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO-252
 

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HTD058N03R Datasheet (PDF)

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HTD058N03R

HTD058N03R P-130V N-Ch Power MOSFET30 VVDSFeature5.4RDS(on),typ VGS=10V m Optimized for high speed switching7.2RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability76.1 AID (Sillicon Limited) Enhanced Avalanche Ruggedness46 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplicationPin2 Har

Datasheet: HGW190N15S , HGW190N15SL , HGW195N15S , HTA1K2P10 , HTB025N03 , HTD025N03 , HTD035N03 , HTD040N03 , IRF9540N , HTD060N03 , HTD070N04 , HTD080P03 , HTD090N03 , HTD140N03 , HTD150P06 , HTD160P04 , HTD1K5N10 .

History: AFN06N60T220FT | APM4015PU | 2SK1808 | 8N60L-TF2-T | AP04N60S-H-HF | KI1563DH | 2SK3604-01L

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