HTD058N03R MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD058N03R
Marking Code: TD058N03R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 46 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 152 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO-252
HTD058N03R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD058N03R Datasheet (PDF)
..1. Size:789K cn hunteck
htd058n03r.pdf
htd058n03r.pdf
HTD058N03R P-130V N-Ch Power MOSFET30 VVDSFeature5.4RDS(on),typ VGS=10V m Optimized for high speed switching7.2RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability76.1 AID (Sillicon Limited) Enhanced Avalanche Ruggedness46 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplicationPin2 Har
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
