HTD058N03R Datasheet. Specs and Replacement

Type Designator: HTD058N03R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 152 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: TO-252

HTD058N03R substitution

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HTD058N03R datasheet

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HTD058N03R

HTD058N03R P-1 30V N-Ch Power MOSFET 30 V VDS Feature 5.4 RDS(on),typ VGS=10V m Optimized for high speed switching 7.2 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 76.1 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 46 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Pin2 Har... See More ⇒

Detailed specifications: HGW190N15S, HGW190N15SL, HGW195N15S, HTA1K2P10, HTB025N03, HTD025N03, HTD035N03, HTD040N03, SKD502T, HTD060N03, HTD070N04, HTD080P03, HTD090N03, HTD140N03, HTD150P06, HTD160P04, HTD1K5N10

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