HTD060N03 Datasheet. Specs and Replacement

Type Designator: HTD060N03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 328 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-252

HTD060N03 substitution

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HTD060N03 datasheet

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HTD060N03

HTD060N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 5.3 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 80 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial TO-252 Gate 2 Src 3 1 Part ... See More ⇒

Detailed specifications: HGW190N15SL, HGW195N15S, HTA1K2P10, HTB025N03, HTD025N03, HTD035N03, HTD040N03, HTD058N03R, K4145, HTD070N04, HTD080P03, HTD090N03, HTD140N03, HTD150P06, HTD160P04, HTD1K5N10, HTD200P03

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