All MOSFET. HTD060N03 Datasheet

 

HTD060N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTD060N03
   Marking Code: TD060N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34.6 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252

 HTD060N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTD060N03 Datasheet (PDF)

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 htd060n03.pdf

HTD060N03 HTD060N03

HTD060N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level5.3RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness80 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SRT10N230HD56

 

 
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