All MOSFET. HTD060N03 Datasheet

 

HTD060N03 Datasheet and Replacement


   Type Designator: HTD060N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252
 

 HTD060N03 substitution

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HTD060N03 Datasheet (PDF)

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HTD060N03

HTD060N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level5.3RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness80 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part

Datasheet: HGW190N15SL , HGW195N15S , HTA1K2P10 , HTB025N03 , HTD025N03 , HTD035N03 , HTD040N03 , HTD058N03R , IRFB3607 , HTD070N04 , HTD080P03 , HTD090N03 , HTD140N03 , HTD150P06 , HTD160P04 , HTD1K5N10 , HTD200P03 .

History: SIHF9530S | AP9973GJ-HF | SFF440 | CEDM7004VL

Keywords - HTD060N03 MOSFET datasheet

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