All MOSFET. HTD080P03 Datasheet

 

HTD080P03 Datasheet and Replacement


   Type Designator: HTD080P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 634 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-252
 

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HTD080P03 Datasheet (PDF)

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HTD080P03

HTD080P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness9RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-80 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252Drai

Datasheet: HTA1K2P10 , HTB025N03 , HTD025N03 , HTD035N03 , HTD040N03 , HTD058N03R , HTD060N03 , HTD070N04 , RFP50N06 , HTD090N03 , HTD140N03 , HTD150P06 , HTD160P04 , HTD1K5N10 , HTD200P03 , HTD2K1P10 , HTD2K4P15T .

History: TPM1013ER3 | S80N08R | BUK9C07-65BIT | TPCC8002-H | H7N1004FM | AP2765I-A-HF | HGB027N10S

Keywords - HTD080P03 MOSFET datasheet

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