HTD080P03 Datasheet. Specs and Replacement

Type Designator: HTD080P03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 634 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO-252

HTD080P03 substitution

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HTD080P03 datasheet

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HTD080P03

HTD080P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 6 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 9 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -80 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor TO-252 Drai... See More ⇒

Detailed specifications: HTA1K2P10, HTB025N03, HTD025N03, HTD035N03, HTD040N03, HTD058N03R, HTD060N03, HTD070N04, AON7410, HTD090N03, HTD140N03, HTD150P06, HTD160P04, HTD1K5N10, HTD200P03, HTD2K1P10, HTD2K4P15T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.