HTD080P03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD080P03
Marking Code: TD080P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 62.4 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 634 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO-252
HTD080P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD080P03 Datasheet (PDF)
..1. Size:494K cn hunteck
htd080p03.pdf
htd080p03.pdf
HTD080P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness9RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-80 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252Drai
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