All MOSFET. HTD090N03 Datasheet

 

HTD090N03 Datasheet and Replacement


   Type Designator: HTD090N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 196 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252
 

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HTD090N03 Datasheet (PDF)

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HTD090N03

HTD090N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness50 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part

Datasheet: HTB025N03 , HTD025N03 , HTD035N03 , HTD040N03 , HTD058N03R , HTD060N03 , HTD070N04 , HTD080P03 , 4N60 , HTD140N03 , HTD150P06 , HTD160P04 , HTD1K5N10 , HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T .

History: 2SJ357 | S15H12S | STY112N65M5 | AP65PN2R5I | BL4N80-D | MPVA12N65F | FQD14N15TM

Keywords - HTD090N03 MOSFET datasheet

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