HTD090N03 Datasheet. Specs and Replacement

Type Designator: HTD090N03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 196 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-252

HTD090N03 substitution

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HTD090N03 datasheet

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HTD090N03

HTD090N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 7.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 50 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial TO-252 Gate 2 Src 3 1 Part ... See More ⇒

Detailed specifications: HTB025N03, HTD025N03, HTD035N03, HTD040N03, HTD058N03R, HTD060N03, HTD070N04, HTD080P03, 12N60, HTD140N03, HTD150P06, HTD160P04, HTD1K5N10, HTD200P03, HTD2K1P10, HTD2K4P15T, HTI2K4P15T

Keywords - HTD090N03 MOSFET specs

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