HTD140N03 Datasheet. Specs and Replacement
Type Designator: HTD140N03 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 111 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-252
HTD140N03 substitution
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HTD140N03 datasheet
htd140n03.pdf
HTD140N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 12 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 25 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial TO-252 Gate 2 Src 3 1 Part N... See More ⇒
Detailed specifications: HTD025N03, HTD035N03, HTD040N03, HTD058N03R, HTD060N03, HTD070N04, HTD080P03, HTD090N03, 5N65, HTD150P06, HTD160P04, HTD1K5N10, HTD200P03, HTD2K1P10, HTD2K4P15T, HTI2K4P15T, HTD300N10
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