All MOSFET. HTD150P06 Datasheet

 

HTD150P06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTD150P06
   Marking Code: TD150P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 111 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 353 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-252

 HTD150P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTD150P06 Datasheet (PDF)

 ..1. Size:572K  cn hunteck
 htd150p06.pdf

HTD150P06 HTD150P06

HTD150P06 P-160V P-Ch Power MOSFET-60 VVDSFeature12RDS(on),typ VGS=-10V m High Speed Power Switching, Logic Level15RDS(on),typ VGS=-4.5V m Enhanced Avalanche Ruggedness-40 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252Drain2Gate31Part Number Pac

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