HTD150P06 Datasheet. Specs and Replacement

Type Designator: HTD150P06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 353 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-252

HTD150P06 substitution

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HTD150P06 datasheet

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HTD150P06

HTD150P06 P-1 60V P-Ch Power MOSFET -60 V VDS Feature 12 RDS(on),typ VGS=-10V m High Speed Power Switching, Logic Level 15 RDS(on),typ VGS=-4.5V m Enhanced Avalanche Ruggedness -40 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor TO-252 Drain 2 Gate 3 1 Part Number Pac... See More ⇒

Detailed specifications: HTD035N03, HTD040N03, HTD058N03R, HTD060N03, HTD070N04, HTD080P03, HTD090N03, HTD140N03, IRF1010E, HTD160P04, HTD1K5N10, HTD200P03, HTD2K1P10, HTD2K4P15T, HTI2K4P15T, HTD300N10, HTD350C04

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.