All MOSFET. HTD150P06 Datasheet

 

HTD150P06 Datasheet and Replacement


   Type Designator: HTD150P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 353 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-252
 

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HTD150P06 Datasheet (PDF)

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HTD150P06

HTD150P06 P-160V P-Ch Power MOSFET-60 VVDSFeature12RDS(on),typ VGS=-10V m High Speed Power Switching, Logic Level15RDS(on),typ VGS=-4.5V m Enhanced Avalanche Ruggedness-40 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252Drain2Gate31Part Number Pac

Datasheet: HTD035N03 , HTD040N03 , HTD058N03R , HTD060N03 , HTD070N04 , HTD080P03 , HTD090N03 , HTD140N03 , IRF530 , HTD160P04 , HTD1K5N10 , HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , HTD350C04 .

History: 2SK2199 | 8N60L-TF2-T | 2SK1808 | AP04N60S-H-HF | APM4015PU | KI1563DH | 2SK3604-01L

Keywords - HTD150P06 MOSFET datasheet

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