All MOSFET. HTD160P04 Datasheet

 

HTD160P04 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTD160P04
   Marking Code: TD160P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41.7 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 271 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-252

 HTD160P04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTD160P04 Datasheet (PDF)

 ..1. Size:535K  cn hunteck
htd160p04.pdf

HTD160P04 HTD160P04

HTD160P04 P-140V P-Ch Power MOSFETFeature-40 VVDS High Speed Power Switching, Logic Level14RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness20RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-43 AID (Sillicon Limited) Lead Free, Halogen Free-25 AID (Package Limited)Application Load Switches Hard Switching and High Speed Circui

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