All MOSFET. HTD160P04 Datasheet

 

HTD160P04 Datasheet and Replacement


   Type Designator: HTD160P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 271 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-252
 

 HTD160P04 substitution

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HTD160P04 Datasheet (PDF)

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HTD160P04

HTD160P04 P-140V P-Ch Power MOSFETFeature-40 VVDS High Speed Power Switching, Logic Level14RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness20RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-43 AID (Sillicon Limited) Lead Free, Halogen Free-25 AID (Package Limited)Application Load Switches Hard Switching and High Speed Circui

Datasheet: HTD040N03 , HTD058N03R , HTD060N03 , HTD070N04 , HTD080P03 , HTD090N03 , HTD140N03 , HTD150P06 , AON7506 , HTD1K5N10 , HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 .

History: PE532DY | OSG60R1K8PF

Keywords - HTD160P04 MOSFET datasheet

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