HTD160P04 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD160P04
Marking Code: TD160P04
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 41.7 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 271 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-252
HTD160P04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD160P04 Datasheet (PDF)
htd160p04.pdf
HTD160P04 P-140V P-Ch Power MOSFETFeature-40 VVDS High Speed Power Switching, Logic Level14RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness20RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-43 AID (Sillicon Limited) Lead Free, Halogen Free-25 AID (Package Limited)Application Load Switches Hard Switching and High Speed Circui
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