HTD160P04 Datasheet. Specs and Replacement

Type Designator: HTD160P04  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 271 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO-252

HTD160P04 substitution

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HTD160P04 datasheet

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HTD160P04

HTD160P04 P-1 40V P-Ch Power MOSFET Feature -40 V VDS High Speed Power Switching, Logic Level 14 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 20 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -43 A ID (Sillicon Limited) Lead Free, Halogen Free -25 A ID (Package Limited) Application Load Switches Hard Switching and High Speed Circui... See More ⇒

Detailed specifications: HTD040N03, HTD058N03R, HTD060N03, HTD070N04, HTD080P03, HTD090N03, HTD140N03, HTD150P06, IRFB3607, HTD1K5N10, HTD200P03, HTD2K1P10, HTD2K4P15T, HTI2K4P15T, HTD300N10, HTD350C04, HTD360N10

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.