HTD1K5N10 Datasheet. Specs and Replacement

Type Designator: HTD1K5N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-252

HTD1K5N10 substitution

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HTD1K5N10 datasheet

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HTD1K5N10

HTD1K5N10 P-1 30V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 130 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 10 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial TO-252 Gate 2 Src 3 1 Part... See More ⇒

Detailed specifications: HTD058N03R, HTD060N03, HTD070N04, HTD080P03, HTD090N03, HTD140N03, HTD150P06, HTD160P04, AON6380, HTD200P03, HTD2K1P10, HTD2K4P15T, HTI2K4P15T, HTD300N10, HTD350C04, HTD360N10, HTD410P06

Keywords - HTD1K5N10 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs