HTD1K5N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD1K5N10
Marking Code: TD1K5N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18.8 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 52 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO-252
HTD1K5N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD1K5N10 Datasheet (PDF)
htd1k5n10.pdf
HTD1K5N10 P-130V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level130RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness10 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part
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