All MOSFET. HTD1K5N10 Datasheet

 

HTD1K5N10 Datasheet and Replacement


   Type Designator: HTD1K5N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-252
 

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HTD1K5N10 Datasheet (PDF)

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HTD1K5N10

HTD1K5N10 P-130V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level130RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness10 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part

Datasheet: HTD058N03R , HTD060N03 , HTD070N04 , HTD080P03 , HTD090N03 , HTD140N03 , HTD150P06 , HTD160P04 , IRLZ44N , HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 .

History: AP18P10AGH-HF | TPD60R1K5MFD

Keywords - HTD1K5N10 MOSFET datasheet

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