HTD200P03 Datasheet. Specs and Replacement

Type Designator: HTD200P03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 208 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-252

HTD200P03 substitution

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HTD200P03 datasheet

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HTD200P03

HTD200P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 17 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 25 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -35 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Hard Switching and High Speed Circuit TO-252 DC/DC in Telecoms and Indu... See More ⇒

Detailed specifications: HTD060N03, HTD070N04, HTD080P03, HTD090N03, HTD140N03, HTD150P06, HTD160P04, HTD1K5N10, IRF530, HTD2K1P10, HTD2K4P15T, HTI2K4P15T, HTD300N10, HTD350C04, HTD360N10, HTD410P06, HTD440P04

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