HTD2K4P15T Specs and Replacement
Type Designator: HTD2K4P15T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 135 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO-252
HTD2K4P15T substitution
HTD2K4P15T datasheet
htd2k4p15t hti2k4p15t.pdf
HTD2K4P15T , P-1 HTI2K4P15T 135V P-Ch Power MOSFET Feature -135 V VDS High Speed Power Smooth Switching 200 RDS(on),typ VGS=-10V mW Enhanced Body diode dv/dt capability -12 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ... See More ⇒
htd2k1p10.pdf
HTD2K1P10 P-1 100V P-Ch Power MOSFET Feature -100 V VDS High Speed Power Switching, Logic Level 182 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness 190 RDS(on),typ VGS=-7V m 100% UIS Tested, 100% Rg Tested -10 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor TO-252... See More ⇒
Detailed specifications: HTD080P03 , HTD090N03 , HTD140N03 , HTD150P06 , HTD160P04 , HTD1K5N10 , HTD200P03 , HTD2K1P10 , NCEP15T14 , HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 .
Keywords - HTD2K4P15T MOSFET specs
HTD2K4P15T cross reference
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HTD2K4P15T replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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