All MOSFET. HTI2K4P15T Datasheet

 

HTI2K4P15T Datasheet and Replacement


   Type Designator: HTI2K4P15T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 135 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-251
 

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HTI2K4P15T Datasheet (PDF)

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HTI2K4P15T

HTD2K4P15T , P-1HTI2K4P15T135V P-Ch Power MOSFETFeature-135 VVDS High Speed Power Smooth Switching200RDS(on),typ VGS=-10V mW Enhanced Body diode dv/dt capability-12 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power

Datasheet: HTD090N03 , HTD140N03 , HTD150P06 , HTD160P04 , HTD1K5N10 , HTD200P03 , HTD2K1P10 , HTD2K4P15T , IRFP250 , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T .

History: FQI2N30TU | LP3218DT1G

Keywords - HTI2K4P15T MOSFET datasheet

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