HTI2K4P15T Datasheet and Replacement
Type Designator: HTI2K4P15T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 135 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO-251
HTI2K4P15T substitution
HTI2K4P15T Datasheet (PDF)
htd2k4p15t hti2k4p15t.pdf

HTD2K4P15T , P-1HTI2K4P15T135V P-Ch Power MOSFETFeature-135 VVDS High Speed Power Smooth Switching200RDS(on),typ VGS=-10V mW Enhanced Body diode dv/dt capability-12 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power
Datasheet: HTD090N03 , HTD140N03 , HTD150P06 , HTD160P04 , HTD1K5N10 , HTD200P03 , HTD2K1P10 , HTD2K4P15T , IRFP250 , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T .
History: 4N80G-TND-R | STS17NF3LL
Keywords - HTI2K4P15T MOSFET datasheet
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History: 4N80G-TND-R | STS17NF3LL



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