HTI2K4P15T Datasheet. Specs and Replacement

Type Designator: HTI2K4P15T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 135 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO-251

HTI2K4P15T substitution

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HTI2K4P15T datasheet

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 htd2k4p15t hti2k4p15t.pdf pdf_icon

HTI2K4P15T

HTD2K4P15T , P-1 HTI2K4P15T 135V P-Ch Power MOSFET Feature -135 V VDS High Speed Power Smooth Switching 200 RDS(on),typ VGS=-10V mW Enhanced Body diode dv/dt capability -12 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ... See More ⇒

Detailed specifications: HTD090N03, HTD140N03, HTD150P06, HTD160P04, HTD1K5N10, HTD200P03, HTD2K1P10, HTD2K4P15T, AON7506, HTD300N10, HTD350C04, HTD360N10, HTD410P06, HTD440P04, HTD480N06P, HTD600N06, HTD760P10T

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