HTD350C04 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD350C04
Marking Code: TD350C04
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.1 nC
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 77 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-252
HTD350C04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD350C04 Datasheet (PDF)
..1. Size:1199K cn hunteck
htd350c04.pdf
htd350c04.pdf
HTD350C04P-140V Complementary Power MOSFETN-CH P-CHFeature40 -40 VVDS High Speed Power Switching, Logic Level35 44RDS(on),max m Enhanced Avalanche Ruggedness12 -9 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit BLDC motorTO-252-4LD2D1D1/D2G1 G2G2 S2 Part Number Package Marking G1
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
