HTD350C04 Datasheet. Specs and Replacement

Type Designator: HTD350C04  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO-252

HTD350C04 substitution

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HTD350C04 datasheet

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HTD350C04

HTD350C04 P-1 40V Complementary Power MOSFET N-CH P-CH Feature 40 -40 V VDS High Speed Power Switching, Logic Level 35 44 RDS(on),max m Enhanced Avalanche Ruggedness 12 -9 A ID (Sillicon Limited) Lead Free, Halogen Free Application Hard Switching and High Speed Circuit BLDC motor TO-252-4L D2 D1 D1/D2 G1 G2 G2 S2 Part Number Package Marking G1 ... See More ⇒

Detailed specifications: HTD150P06, HTD160P04, HTD1K5N10, HTD200P03, HTD2K1P10, HTD2K4P15T, HTI2K4P15T, HTD300N10, IRFP450, HTD360N10, HTD410P06, HTD440P04, HTD480N06P, HTD600N06, HTD760P10T, HTD950P06, HTJ1K0P02

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.