All MOSFET. HTD350C04 Datasheet

 

HTD350C04 Datasheet and Replacement


   Type Designator: HTD350C04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-252
 

 HTD350C04 substitution

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HTD350C04 Datasheet (PDF)

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HTD350C04

HTD350C04P-140V Complementary Power MOSFETN-CH P-CHFeature40 -40 VVDS High Speed Power Switching, Logic Level35 44RDS(on),max m Enhanced Avalanche Ruggedness12 -9 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit BLDC motorTO-252-4LD2D1D1/D2G1 G2G2 S2 Part Number Package Marking G1

Datasheet: HTD150P06 , HTD160P04 , HTD1K5N10 , HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , IRF1407 , HTD360N10 , HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 .

History: VBZE10N20 | RJK03M3DPA

Keywords - HTD350C04 MOSFET datasheet

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