HTD480N06P Datasheet. Specs and Replacement

Type Designator: HTD480N06P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.2 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-252

HTD480N06P substitution

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HTD480N06P datasheet

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HTD480N06P

HTD480N06P P-1 60V N-Ch Power MOSFET 60 V Feature VDS 30 Optimized for high speed switching RDS(on),typ VGS=10V mW 33 RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability 16 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swi... See More ⇒

Detailed specifications: HTD2K1P10, HTD2K4P15T, HTI2K4P15T, HTD300N10, HTD350C04, HTD360N10, HTD410P06, HTD440P04, 4N60, HTD600N06, HTD760P10T, HTD950P06, HTJ1K0P02, HTJ1K3P03, HTJ1K5P06, HTJ200N02, HTJ270N03

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.