All MOSFET. HTD480N06P Datasheet

 

HTD480N06P Datasheet and Replacement


   Type Designator: HTD480N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16.2 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-252
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HTD480N06P Datasheet (PDF)

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HTD480N06P

HTD480N06P P-160V N-Ch Power MOSFET60 VFeature VDS30 Optimized for high speed switching RDS(on),typ VGS=10V mW33RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability16 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Swi

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History: WMM11N80M3 | FDMS9620S

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