HTD480N06P MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD480N06P
Marking Code: TD480N06P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17.5 nC
trⓘ - Rise Time: 16.2 nS
Cossⓘ - Output Capacitance: 51 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-252
HTD480N06P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD480N06P Datasheet (PDF)
..1. Size:1166K cn hunteck
htd480n06p.pdf
htd480n06p.pdf
HTD480N06P P-160V N-Ch Power MOSFET60 VFeature VDS30 Optimized for high speed switching RDS(on),typ VGS=10V mW33RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability16 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Swi
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