All MOSFET. HTD480N06P Datasheet

 

HTD480N06P Datasheet and Replacement


   Type Designator: HTD480N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16.2 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-252
 

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HTD480N06P Datasheet (PDF)

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HTD480N06P

HTD480N06P P-160V N-Ch Power MOSFET60 VFeature VDS30 Optimized for high speed switching RDS(on),typ VGS=10V mW33RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability16 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Swi

Datasheet: HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , HTD440P04 , 10N65 , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 , HTJ270N03 .

History: ME2602-G | STD5NM60 | RSS050P03TB | SUD50P08-25L | RJK6032DPH-E0 | CEF08N8 | HM120N03

Keywords - HTD480N06P MOSFET datasheet

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