HTD600N06 Datasheet. Specs and Replacement

Type Designator: HTD600N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 16.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO-252

HTD600N06 substitution

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HTD600N06 datasheet

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HTD600N06

HTD600N06 P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 50 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 12 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial TO-252 Gate 2 3 1 Src Part N... See More ⇒

Detailed specifications: HTD2K4P15T, HTI2K4P15T, HTD300N10, HTD350C04, HTD360N10, HTD410P06, HTD440P04, HTD480N06P, IRFP250, HTD760P10T, HTD950P06, HTJ1K0P02, HTJ1K3P03, HTJ1K5P06, HTJ200N02, HTJ270N03, HTJ300N02

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.