All MOSFET. HTD600N06 Datasheet

 

HTD600N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTD600N06
   Marking Code: TD600N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 16.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.8 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-252

 HTD600N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTD600N06 Datasheet (PDF)

 ..1. Size:885K  cn hunteck
 htd600n06.pdf

HTD600N06 HTD600N06

HTD600N06 P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level50RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate231SrcPart N

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFT60N20 | IXTP05N100M

 

 
Back to Top