HTD760P10T MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD760P10T
Marking Code: TD760P10T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 78 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 345 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: TO-252
HTD760P10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD760P10T Datasheet (PDF)
htd760p10t.pdf
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