HTD760P10T Datasheet. Specs and Replacement

Type Designator: HTD760P10T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm

Package: TO-252

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HTD760P10T datasheet

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HTD760P10T

P-1 HTD760P10T 100V P-Ch Power MOSFET -100 V VDS Feature 63 RDS(on),typ VGS=10V mW High Speed Power Switching, Logic Level 72 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness -30 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Drain Application TO-252 Pin2 Hard Switching and High Speed Circuit DC/DC in Telecoms and Inductrial G... See More ⇒

Detailed specifications: HTI2K4P15T, HTD300N10, HTD350C04, HTD360N10, HTD410P06, HTD440P04, HTD480N06P, HTD600N06, 10N65, HTD950P06, HTJ1K0P02, HTJ1K3P03, HTJ1K5P06, HTJ200N02, HTJ270N03, HTJ300N02, HTJ350N03

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