HTD760P10T PDF and Equivalents Search

 

HTD760P10T PDF Specs and Replacement


   Type Designator: HTD760P10T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: TO-252
 

 HTD760P10T substitution

   - MOSFET ⓘ Cross-Reference Search

 

HTD760P10T PDF Specs

 ..1. Size:1272K  cn hunteck
 htd760p10t.pdf pdf_icon

HTD760P10T

P-1 HTD760P10T 100V P-Ch Power MOSFET -100 V VDS Feature 63 RDS(on),typ VGS=10V mW High Speed Power Switching, Logic Level 72 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness -30 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Drain Application TO-252 Pin2 Hard Switching and High Speed Circuit DC/DC in Telecoms and Inductrial G... See More ⇒

Detailed specifications: HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 , IRF1407 , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 , HTJ270N03 , HTJ300N02 , HTJ350N03 .

History: QM2410J

Keywords - HTD760P10T MOSFET specs

 HTD760P10T cross reference
 HTD760P10T equivalent finder
 HTD760P10T pdf lookup
 HTD760P10T substitution
 HTD760P10T replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


 
.