All MOSFET. HTD760P10T Datasheet

 

HTD760P10T Datasheet and Replacement


   Type Designator: HTD760P10T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: TO-252
 

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HTD760P10T Datasheet (PDF)

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HTD760P10T

P-1HTD760P10T100V P-Ch Power MOSFET-100 VVDSFeature63RDS(on),typ VGS=10V mW High Speed Power Switching, Logic Level72RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness-30 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication TO-252Pin2 Hard Switching and High Speed Circuit DC/DC in Telecoms and InductrialG

Datasheet: HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 , P0903BDG , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 , HTJ270N03 , HTJ300N02 , HTJ350N03 .

History: SVS5N65DD2TR | AON6242 | GSM6993 | ELM5B801QA | AON6266 | KRLML6401 | K2698

Keywords - HTD760P10T MOSFET datasheet

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