HTJ1K0P02 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTJ1K0P02
Marking Code: 21
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.2 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT-23
HTJ1K0P02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTJ1K0P02 Datasheet (PDF)
htj1k0p02.pdf
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