All MOSFET. HTJ300N02 Datasheet

 

HTJ300N02 Datasheet and Replacement


   Type Designator: HTJ300N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: SOT23
 

 HTJ300N02 substitution

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HTJ300N02 Datasheet (PDF)

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HTJ300N02

HTJ300N02 P-120V N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level26RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness5 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT-23GateSrcPart Number Pack

Datasheet: HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 , HTJ270N03 , RU6888R , HTJ350N03 , HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 , HTJ600N06 .

History: BLP025N10-B | AM4936N | BLP023N10-P | IXFR26N120P | CHM51A3ZGP | STSJ100NH3LL

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