HTJ300N02 Datasheet. Specs and Replacement

Type Designator: HTJ300N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm

Package: SOT23

HTJ300N02 substitution

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HTJ300N02 datasheet

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HTJ300N02

HTJ300N02 P-1 20V N-Ch Power MOSFET Feature 20 V VDS High Speed Power Switching, Logic Level 26 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 5 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial SOT-23 Gate Src Part Number Pack... See More ⇒

Detailed specifications: HTD600N06, HTD760P10T, HTD950P06, HTJ1K0P02, HTJ1K3P03, HTJ1K5P06, HTJ200N02, HTJ270N03, 18N50, HTJ350N03, HTJ440P02, HTJ440P02E, HTJ440P03, HTJ450N02, HTJ500N03, HTJ500P03, HTJ600N06

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