HTJ350N03 Datasheet and Replacement
Type Designator: HTJ350N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.04 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT23
HTJ350N03 substitution
HTJ350N03 Datasheet (PDF)
htj350n03.pdf
HTJ350N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level30RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness5 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT-23GateSrcPart Number Pack
Datasheet: HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 , HTJ270N03 , HTJ300N02 , 20N50 , HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 , HTJ600N06 , HTJ650P02 .
History: NCEP40T16LL | NCEP40T17AG | NCEP40T17AT | STFI24N60M2
Keywords - HTJ350N03 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: NCEP40T16LL | NCEP40T17AG | NCEP40T17AT | STFI24N60M2
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