All MOSFET. HTJ350N03 Datasheet

 

HTJ350N03 Datasheet and Replacement


   Type Designator: HTJ350N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.04 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT23
 

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HTJ350N03 Datasheet (PDF)

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HTJ350N03

HTJ350N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level30RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness5 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT-23GateSrcPart Number Pack

Datasheet: HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 , HTJ270N03 , HTJ300N02 , IRF530 , HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 , HTJ600N06 , HTJ650P02 .

History: SI7703EDN | NTBG040N120SC1 | NCEP01P35A | AM40P03-34D | BLP08N10G-B | PM505BA | SIHFR020

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