HTJ350N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTJ350N03
Marking Code: 1D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.04 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.1 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT23
HTJ350N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTJ350N03 Datasheet (PDF)
..1. Size:878K cn hunteck
htj350n03.pdf
htj350n03.pdf
HTJ350N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level30RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness5 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT-23GateSrcPart Number Pack
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
