HTJ350N03 Datasheet. Specs and Replacement

Type Designator: HTJ350N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.04 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT23

HTJ350N03 substitution

- MOSFET ⓘ Cross-Reference Search

 

HTJ350N03 datasheet

 ..1. Size:878K  cn hunteck
 htj350n03.pdf pdf_icon

HTJ350N03

HTJ350N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 30 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 5 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial SOT-23 Gate Src Part Number Pack... See More ⇒

Detailed specifications: HTD760P10T, HTD950P06, HTJ1K0P02, HTJ1K3P03, HTJ1K5P06, HTJ200N02, HTJ270N03, HTJ300N02, 20N50, HTJ440P02, HTJ440P02E, HTJ440P03, HTJ450N02, HTJ500N03, HTJ500P03, HTJ600N06, HTJ650P02

Keywords - HTJ350N03 MOSFET specs

 HTJ350N03 cross reference

 HTJ350N03 equivalent finder

 HTJ350N03 pdf lookup

 HTJ350N03 substitution

 HTJ350N03 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs