All MOSFET. HTJ450N02 Datasheet

 

HTJ450N02 Datasheet and Replacement


   Type Designator: HTJ450N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.04 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23
 

 HTJ450N02 substitution

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HTJ450N02 Datasheet (PDF)

 ..1. Size:920K  cn hunteck
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HTJ450N02

HTJ450N02 P-120V N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level36RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness43RDS(on),typ VGS=2.5V m 100% UIS Tested, 100% Rg Tested58RDS(on),typ VGS=1.8V m Lead Free, Halogen Free3.6 AID (Sillicon Limited)Application Hard Switching and High Speed Circuit Drain DC/D

Datasheet: HTJ1K5P06 , HTJ200N02 , HTJ270N03 , HTJ300N02 , HTJ350N03 , HTJ440P02 , HTJ440P02E , HTJ440P03 , 8N60 , HTJ500N03 , HTJ500P03 , HTJ600N06 , HTJ650P02 , HTJ850P03 , HTL140N02 , HTM035N03 , HTM040N03 .

History: DH100P35E | AM4531C

Keywords - HTJ450N02 MOSFET datasheet

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