HTJ450N02 Datasheet. Specs and Replacement

Type Designator: HTJ450N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.04 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23

HTJ450N02 substitution

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HTJ450N02 datasheet

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HTJ450N02

HTJ450N02 P-1 20V N-Ch Power MOSFET Feature 20 V VDS High Speed Power Switching, Logic Level 36 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 43 RDS(on),typ VGS=2.5V m 100% UIS Tested, 100% Rg Tested 58 RDS(on),typ VGS=1.8V m Lead Free, Halogen Free 3.6 A ID (Sillicon Limited) Application Hard Switching and High Speed Circuit Drain DC/D... See More ⇒

Detailed specifications: HTJ1K5P06, HTJ200N02, HTJ270N03, HTJ300N02, HTJ350N03, HTJ440P02, HTJ440P02E, HTJ440P03, IRFZ24N, HTJ500N03, HTJ500P03, HTJ600N06, HTJ650P02, HTJ850P03, HTL140N02, HTM035N03, HTM040N03

Keywords - HTJ450N02 MOSFET specs

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