All MOSFET. HTJ450N02 Datasheet

 

HTJ450N02 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTJ450N02
   Marking Code: 1Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.04 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.6 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23

 HTJ450N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTJ450N02 Datasheet (PDF)

 ..1. Size:920K  cn hunteck
 htj450n02.pdf

HTJ450N02 HTJ450N02

HTJ450N02 P-120V N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level36RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness43RDS(on),typ VGS=2.5V m 100% UIS Tested, 100% Rg Tested58RDS(on),typ VGS=1.8V m Lead Free, Halogen Free3.6 AID (Sillicon Limited)Application Hard Switching and High Speed Circuit Drain DC/D

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSP7461P

 

 
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