HTJ450N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTJ450N02
Marking Code: 1Y
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.04 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 3.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.6 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 56 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23
HTJ450N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTJ450N02 Datasheet (PDF)
..1. Size:920K cn hunteck
htj450n02.pdf
htj450n02.pdf
HTJ450N02 P-120V N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level36RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness43RDS(on),typ VGS=2.5V m 100% UIS Tested, 100% Rg Tested58RDS(on),typ VGS=1.8V m Lead Free, Halogen Free3.6 AID (Sillicon Limited)Application Hard Switching and High Speed Circuit Drain DC/D
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
