All MOSFET. HTJ650P02 Datasheet

 

HTJ650P02 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTJ650P02
   Marking Code: 25
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.04 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.2 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
   Package: SOT-23

 HTJ650P02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTJ650P02 Datasheet (PDF)

 ..1. Size:550K  cn hunteck
 htj650p02.pdf

HTJ650P02 HTJ650P02

HTJ650P02 P-120V P-Ch Power MOSFET-20 VVDSFeature53RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level75RDS(on),typ VGS=2.5V m Enhanced Avalanche Ruggedness150RDS(on),typ VGS=1.8V m Lead Free, Halogen Free-4 AID (Sillicon Limited)Application Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23Drain

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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