All MOSFET. HTJ650P02 Datasheet

 

HTJ650P02 Datasheet and Replacement


   Type Designator: HTJ650P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.04 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
   Package: SOT-23
 

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HTJ650P02 Datasheet (PDF)

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HTJ650P02

HTJ650P02 P-120V P-Ch Power MOSFET-20 VVDSFeature53RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level75RDS(on),typ VGS=2.5V m Enhanced Avalanche Ruggedness150RDS(on),typ VGS=1.8V m Lead Free, Halogen Free-4 AID (Sillicon Limited)Application Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23Drain

Datasheet: HTJ350N03 , HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 , HTJ600N06 , IRF520 , HTJ850P03 , HTL140N02 , HTM035N03 , HTM040N03 , HTM040N03P , HTM058N03P , HTM060N03 , HTM063P02 .

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