HTJ650P02 Datasheet. Specs and Replacement

Type Designator: HTJ650P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.04 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm

Package: SOT-23

HTJ650P02 substitution

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HTJ650P02 datasheet

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HTJ650P02

HTJ650P02 P-1 20V P-Ch Power MOSFET -20 V VDS Feature 53 RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level 75 RDS(on),typ VGS=2.5V m Enhanced Avalanche Ruggedness 150 RDS(on),typ VGS=1.8V m Lead Free, Halogen Free -4 A ID (Sillicon Limited) Application Load Switches Hard Switching and High Speed Circuit BLDC Motor SOT-23 Drain ... See More ⇒

Detailed specifications: HTJ350N03, HTJ440P02, HTJ440P02E, HTJ440P03, HTJ450N02, HTJ500N03, HTJ500P03, HTJ600N06, 75N75, HTJ850P03, HTL140N02, HTM035N03, HTM040N03, HTM040N03P, HTM058N03P, HTM060N03, HTM063P02

Keywords - HTJ650P02 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs