HTJ850P03 Datasheet. Specs and Replacement

Type Designator: HTJ850P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.04 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT-23

HTJ850P03 substitution

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HTJ850P03 datasheet

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HTJ850P03

HTJ850P03 P-1 30V P-Ch Power MOSFET -30 V VDS Feature 75 RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level 125 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness -3.6 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor SOT-23 Drain D S Gate G Part Number Pack... See More ⇒

Detailed specifications: HTJ440P02, HTJ440P02E, HTJ440P03, HTJ450N02, HTJ500N03, HTJ500P03, HTJ600N06, HTJ650P02, AO3400A, HTL140N02, HTM035N03, HTM040N03, HTM040N03P, HTM058N03P, HTM060N03, HTM063P02, HTM095P02

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