All MOSFET. HTJ850P03 Datasheet

 

HTJ850P03 Datasheet and Replacement


   Type Designator: HTJ850P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.04 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23
 

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HTJ850P03 Datasheet (PDF)

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HTJ850P03

HTJ850P03 P-130V P-Ch Power MOSFET-30 VVDSFeature75RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level125RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness-3.6 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23DrainDS GateGPart Number Pack

Datasheet: HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 , HTJ600N06 , HTJ650P02 , RU6888R , HTL140N02 , HTM035N03 , HTM040N03 , HTM040N03P , HTM058N03P , HTM060N03 , HTM063P02 , HTM095P02 .

History: RW1E014SN | SI2303CDS | BL3N150-P | JCS18N25VC | IXTM4N100A | NCEAP15ND10AG | IXFN82N60Q3

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