HTL140N02 Datasheet and Replacement
Type Designator: HTL140N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.08 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 203 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0148 Ohm
Package: DFN2X2
HTL140N02 substitution
HTL140N02 Datasheet (PDF)
htl140n02.pdf

HTL140N02 P-120V N-Ch Power MOSFET20 VVDSFeature13RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level8 AID (Sillicon Limited) Enhanced Avalanche Ruggedness Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN2*2GateSrcPart Number Package MarkingHTL140N02 DFN2*2 1LAb
Datasheet: HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 , HTJ600N06 , HTJ650P02 , HTJ850P03 , IRFZ46N , HTM035N03 , HTM040N03 , HTM040N03P , HTM058N03P , HTM060N03 , HTM063P02 , HTM095P02 , HTM105P03P .
History: IPD65R950CFD
Keywords - HTL140N02 MOSFET datasheet
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History: IPD65R950CFD



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