All MOSFET. HTL140N02 Datasheet

 

HTL140N02 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTL140N02
   Marking Code: 1L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.08 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.2 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0148 Ohm
   Package: DFN2X2

 HTL140N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTL140N02 Datasheet (PDF)

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 htl140n02.pdf

HTL140N02 HTL140N02

HTL140N02 P-120V N-Ch Power MOSFET20 VVDSFeature13RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level8 AID (Sillicon Limited) Enhanced Avalanche Ruggedness Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN2*2GateSrcPart Number Package MarkingHTL140N02 DFN2*2 1LAb

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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