All MOSFET. HTL140N02 Datasheet

 

HTL140N02 Datasheet and Replacement


   Type Designator: HTL140N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.08 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0148 Ohm
   Package: DFN2X2
 

 HTL140N02 substitution

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HTL140N02 Datasheet (PDF)

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HTL140N02

HTL140N02 P-120V N-Ch Power MOSFET20 VVDSFeature13RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level8 AID (Sillicon Limited) Enhanced Avalanche Ruggedness Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN2*2GateSrcPart Number Package MarkingHTL140N02 DFN2*2 1LAb

Datasheet: HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 , HTJ600N06 , HTJ650P02 , HTJ850P03 , IRF730 , HTM035N03 , HTM040N03 , HTM040N03P , HTM058N03P , HTM060N03 , HTM063P02 , HTM095P02 , HTM105P03P .

History: RSD140P06FRA | BUK761R8-30C

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