HTL140N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTL140N02
Marking Code: 1L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.08 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.2 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 203 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0148 Ohm
Package: DFN2X2
HTL140N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTL140N02 Datasheet (PDF)
htl140n02.pdf
HTL140N02 P-120V N-Ch Power MOSFET20 VVDSFeature13RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level8 AID (Sillicon Limited) Enhanced Avalanche Ruggedness Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN2*2GateSrcPart Number Package MarkingHTL140N02 DFN2*2 1LAb
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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