All MOSFET. HTM040N03P Datasheet

 

HTM040N03P Datasheet and Replacement


   Type Designator: HTM040N03P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 71 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17.6 nS
   Cossⓘ - Output Capacitance: 308 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN3.3X3.3
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HTM040N03P Datasheet (PDF)

 ..1. Size:1236K  cn hunteck
 htm040n03p.pdf pdf_icon

HTM040N03P

HTM040N03P P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level3.5RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness4.5RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested71 AID Lead FreeApplication Hard Switching and High Speed CircuitDrainDFN3.3x3.3 DC/DC in Telecoms and InductrialGateSrcPart Number P

 5.1. Size:963K  cn hunteck
 htm040n03.pdf pdf_icon

HTM040N03P

HTM040N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level3.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness32 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Number Pa

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History: TK2P60D | DMP2104LP | IRFBG20

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