HTM040N03P Datasheet. Specs and Replacement

Type Designator: HTM040N03P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 71 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.6 nS

Cossⓘ - Output Capacitance: 308 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN3.3X3.3

HTM040N03P substitution

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HTM040N03P datasheet

 ..1. Size:1236K  cn hunteck
 htm040n03p.pdf pdf_icon

HTM040N03P

HTM040N03P P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 3.5 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 4.5 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 71 A ID Lead Free Application Hard Switching and High Speed Circuit Drain DFN3.3x3.3 DC/DC in Telecoms and Inductrial Gate Src Part Number P... See More ⇒

 5.1. Size:963K  cn hunteck
 htm040n03.pdf pdf_icon

HTM040N03P

HTM040N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 32 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DFN3x3 DC/DC in Telecoms and Inductrial Gate Src Part Number Pa... See More ⇒

Detailed specifications: HTJ500N03, HTJ500P03, HTJ600N06, HTJ650P02, HTJ850P03, HTL140N02, HTM035N03, HTM040N03, 7N60, HTM058N03P, HTM060N03, HTM063P02, HTM095P02, HTM105P03P, HTM120N03, HTM120N03P, HTM150A02

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