HTM058N03P Datasheet. Specs and Replacement

Type Designator: HTM058N03P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: TBD nS

Cossⓘ - Output Capacitance: TBD pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: DFN3.3X3.3

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HTM058N03P datasheet

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HTM058N03P

HTM058N03P P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 4.6 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 5.6 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 48 A ID Lead Free Application Hard Switching and High Speed Circuit Drain DFN3.3x3.3 DC/DC in Telecoms and Inductrial Gate Src Part Numbe... See More ⇒

Detailed specifications: HTJ500P03, HTJ600N06, HTJ650P02, HTJ850P03, HTL140N02, HTM035N03, HTM040N03, HTM040N03P, IRFZ48N, HTM060N03, HTM063P02, HTM095P02, HTM105P03P, HTM120N03, HTM120N03P, HTM150A02, HTM200N03

Keywords - HTM058N03P MOSFET specs

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