All MOSFET. HTM058N03P Datasheet

 

HTM058N03P Datasheet and Replacement


   Type Designator: HTM058N03P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: TBD nS
   Cossⓘ - Output Capacitance: TBD pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: DFN3.3X3.3
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HTM058N03P Datasheet (PDF)

 ..1. Size:244K  cn hunteck
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HTM058N03P

HTM058N03P P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level4.6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness5.6RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested48 AID Lead FreeApplication Hard Switching and High Speed Circuit DrainDFN3.3x3.3 DC/DC in Telecoms and InductrialGateSrcPart Numbe

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History: TK2P60D | DMP2104LP | IRFBG20

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