HTM063P02 Datasheet and Replacement
Type Designator: HTM063P02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 605 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: DFN3X3
HTM063P02 substitution
HTM063P02 Datasheet (PDF)
htm063p02.pdf

HTM063P02 P-120V P-Ch Power MOSFETFeature-20 VVDS High Speed Power Switching, Logic Level5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness-46 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Numbe
htm060n03.pdf

HTM060N03P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness26 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Number Pac
Datasheet: HTJ650P02 , HTJ850P03 , HTL140N02 , HTM035N03 , HTM040N03 , HTM040N03P , HTM058N03P , HTM060N03 , IRF1405 , HTM095P02 , HTM105P03P , HTM120N03 , HTM120N03P , HTM150A02 , HTM200N03 , HTM200P03 , HTN019N03P .
History: SVS70R420MJE3 | BLP04N10-B | RQA0008NXAQS | AM2394NE | OSG70R360DTF | S-LNTK2575LT1G | 80N04
Keywords - HTM063P02 MOSFET datasheet
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History: SVS70R420MJE3 | BLP04N10-B | RQA0008NXAQS | AM2394NE | OSG70R360DTF | S-LNTK2575LT1G | 80N04



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