HTM063P02 Datasheet. Specs and Replacement

Type Designator: HTM063P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 605 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: DFN3X3

HTM063P02 substitution

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HTM063P02 datasheet

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 htm063p02.pdf pdf_icon

HTM063P02

HTM063P02 P-1 20V P-Ch Power MOSFET Feature -20 V VDS High Speed Power Switching, Logic Level 5.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness -46 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Hard Switching and High Speed Circuit DFN3x3 DC/DC in Telecoms and Inductrial Gate Src Part Numbe... See More ⇒

 9.1. Size:1091K  cn hunteck
 htm060n03.pdf pdf_icon

HTM063P02

HTM060N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 26 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DFN3x3 DC/DC in Telecoms and Inductrial Gate Src Part Number Pac... See More ⇒

Detailed specifications: HTJ650P02, HTJ850P03, HTL140N02, HTM035N03, HTM040N03, HTM040N03P, HTM058N03P, HTM060N03, IRF830, HTM095P02, HTM105P03P, HTM120N03, HTM120N03P, HTM150A02, HTM200N03, HTM200P03, HTN019N03P

Keywords - HTM063P02 MOSFET specs

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