HTM095P02 Datasheet. Specs and Replacement

Type Designator: HTM095P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 596 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: DFN3X3

HTM095P02 substitution

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HTM095P02 datasheet

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HTM095P02

HTM095P02 P-1 20V P-Ch Power MOSFET Feature -20 V VDS High Speed Power Switching, Logic Level 7.8 RDS(on),typ VGS=-4.5V m Enhanced Avalanche Ruggedness 10.3 RDS(on),typ VGS=-2.5V m 100% UIS Tested, 100% Rg Tested 14.5 RDS(on),typ VGS=-1.8V m Lead Free, Halogen Free -15 A ID (Sillicon Limited) Drain Application Hard Switching and High Speed Circuit... See More ⇒

Detailed specifications: HTJ850P03, HTL140N02, HTM035N03, HTM040N03, HTM040N03P, HTM058N03P, HTM060N03, HTM063P02, IRLB3034, HTM105P03P, HTM120N03, HTM120N03P, HTM150A02, HTM200N03, HTM200P03, HTN019N03P, HTN020N03

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