All MOSFET. HTM095P02 Datasheet

 

HTM095P02 Datasheet and Replacement


   Type Designator: HTM095P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 596 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: DFN3X3
 

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HTM095P02 Datasheet (PDF)

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HTM095P02

HTM095P02 P-120V P-Ch Power MOSFETFeature-20 VVDS High Speed Power Switching, Logic Level7.8RDS(on),typ VGS=-4.5V m Enhanced Avalanche Ruggedness10.3RDS(on),typ VGS=-2.5V m 100% UIS Tested, 100% Rg Tested14.5RDS(on),typ VGS=-1.8V m Lead Free, Halogen Free-15 AID (Sillicon Limited)DrainApplication Hard Switching and High Speed Circuit

Datasheet: HTJ850P03 , HTL140N02 , HTM035N03 , HTM040N03 , HTM040N03P , HTM058N03P , HTM060N03 , HTM063P02 , 60N06 , HTM105P03P , HTM120N03 , HTM120N03P , HTM150A02 , HTM200N03 , HTM200P03 , HTN019N03P , HTN020N03 .

History: IPD60R380E6 | FQD6N25TM

Keywords - HTM095P02 MOSFET datasheet

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