All MOSFET. HTM105P03P Datasheet

 

HTM105P03P Datasheet and Replacement


   Type Designator: HTM105P03P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 343 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: DFN3X3
 

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HTM105P03P Datasheet (PDF)

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HTM105P03P

HTM105P03P P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level8.6RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness11.5RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested-52 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and Indu

Datasheet: HTL140N02 , HTM035N03 , HTM040N03 , HTM040N03P , HTM058N03P , HTM060N03 , HTM063P02 , HTM095P02 , IRF9640 , HTM120N03 , HTM120N03P , HTM150A02 , HTM200N03 , HTM200P03 , HTN019N03P , HTN020N03 , HTN020N04P .

History: HTM120N03P | HSBA8024A | HSBA8066 | HSK0008

Keywords - HTM105P03P MOSFET datasheet

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