HTM105P03P Datasheet and Replacement
Type Designator: HTM105P03P
Marking Code: TM105P03P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 41.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 65 nC
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 343 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: DFN3X3
HTM105P03P substitution
HTM105P03P Datasheet (PDF)
htm105p03p.pdf

HTM105P03P P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level8.6RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness11.5RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested-52 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and Indu
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NP48N055KLE | BSC057N08NS3G | SL05N06Z | SWP055R68E7T
Keywords - HTM105P03P MOSFET datasheet
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HTM105P03P replacement
History: NP48N055KLE | BSC057N08NS3G | SL05N06Z | SWP055R68E7T



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