HTM105P03P Datasheet. Specs and Replacement

Type Designator: HTM105P03P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 343 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: DFN3X3

HTM105P03P substitution

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HTM105P03P datasheet

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HTM105P03P

HTM105P03P P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 8.6 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 11.5 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested -52 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Hard Switching and High Speed Circuit DFN3x3 DC/DC in Telecoms and Indu... See More ⇒

Detailed specifications: HTL140N02, HTM035N03, HTM040N03, HTM040N03P, HTM058N03P, HTM060N03, HTM063P02, HTM095P02, IRF9640, HTM120N03, HTM120N03P, HTM150A02, HTM200N03, HTM200P03, HTN019N03P, HTN020N03, HTN020N04P

Keywords - HTM105P03P MOSFET specs

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