All MOSFET. HTN019N03P Datasheet

 

HTN019N03P Datasheet and Replacement


   Type Designator: HTN019N03P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 141 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 844 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: DFN5X6
 

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HTN019N03P Datasheet (PDF)

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HTN019N03P

HTN019N03P P-130V N-Ch Power MOSFET30 VFeature VDS1.9 Optimized for high speed switching, Logic Level RDS(on),max VGS=10V mW2.5RDS(on),max VGS=4.5V mW Enhanced Body diode dv/dt capability141 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

Datasheet: HTM063P02 , HTM095P02 , HTM105P03P , HTM120N03 , HTM120N03P , HTM150A02 , HTM200N03 , HTM200P03 , 2N7002 , HTN020N03 , HTN020N04P , HTN021N03 , HTN027N03P , HTN027P02 , HTN030N03 , HTN035N04P , HTN036N03P .

History: 2SK2883 | 2SK2733

Keywords - HTN019N03P MOSFET datasheet

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