All MOSFET. HTN019N03P Datasheet

 

HTN019N03P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTN019N03P
   Marking Code: TN019N03P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 141 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 844 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: DFN5X6

 HTN019N03P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTN019N03P Datasheet (PDF)

 ..1. Size:1082K  cn hunteck
 htn019n03p.pdf

HTN019N03P HTN019N03P

HTN019N03P P-130V N-Ch Power MOSFET30 VFeature VDS1.9 Optimized for high speed switching, Logic Level RDS(on),max VGS=10V mW2.5RDS(on),max VGS=4.5V mW Enhanced Body diode dv/dt capability141 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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