HTN019N03P Datasheet. Specs and Replacement

Type Designator: HTN019N03P

Marking Code: TN019N03P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 87 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 141 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2 V

Qg ⓘ - Total Gate Charge: 180 nC

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 844 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm

Package: DFN5X6

HTN019N03P substitution

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HTN019N03P datasheet

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HTN019N03P

HTN019N03P P-1 30V N-Ch Power MOSFET 30 V Feature VDS 1.9 Optimized for high speed switching, Logic Level RDS(on),max VGS=10V mW 2.5 RDS(on),max VGS=4.5V mW Enhanced Body diode dv/dt capability 141 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch... See More ⇒

Detailed specifications: HTM063P02, HTM095P02, HTM105P03P, HTM120N03, HTM120N03P, HTM150A02, HTM200N03, HTM200P03, MMIS60R580P, HTN020N03, HTN020N04P, HTN021N03, HTN027N03P, HTN027P02, HTN030N03, HTN035N04P, HTN036N03P

Keywords - HTN019N03P MOSFET specs

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