HTO350N03 Datasheet. Specs and Replacement

Type Designator: HTO350N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TSOP-6

HTO350N03 substitution

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HTO350N03 datasheet

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HTO350N03

HTO350N03 P-1 30V N-Ch Power MOSFET 30 V VDS Feature 30 RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level 5.5 A ID (Sillicon Limited) Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial TSOP-6 Gate Src Part Number Package Marking HTO350N03 TSOP-6 1D Absolute Maximum Ratings at Tj=25 ... See More ⇒

Detailed specifications: HTN021N03, HTN027N03P, HTN027P02, HTN030N03, HTN035N04P, HTN036N03P, HTN036P03, HTN070A03, 20N60, HTO500P03, HTP2K1P10, HTS050N03, HTS060N03, HTS075P03, HTS085P03E, HTS110A03, HTS120N03

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