HTO350N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTO350N03
Marking Code: 1D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.1 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TSOP-6
HTO350N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTO350N03 Datasheet (PDF)
..1. Size:903K cn hunteck
hto350n03.pdf
hto350n03.pdf
HTO350N03 P-130V N-Ch Power MOSFET30 VVDSFeature30RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level5.5 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTSOP-6GateSrcPart Number Package MarkingHTO350N03 TSOP-6 1DAbsolute Maximum Ratings at Tj=25
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