HTP2K1P10 Datasheet. Specs and Replacement

Type Designator: HTP2K1P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO-220

HTP2K1P10 substitution

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HTP2K1P10 datasheet

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HTP2K1P10

HTP2K1P10 P-1 100V P-Ch Power MOSFET Feature -100 V VDS High Speed Power Switching, Logic Level 200 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness -10 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor Drain TO-220 Gate Part Number Pack... See More ⇒

Detailed specifications: HTN027P02, HTN030N03, HTN035N04P, HTN036N03P, HTN036P03, HTN070A03, HTO350N03, HTO500P03, IRF540, HTS050N03, HTS060N03, HTS075P03, HTS085P03E, HTS110A03, HTS120N03, HTS130N04, HTS130P03Z

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