All MOSFET. HTP2K1P10 Datasheet

 

HTP2K1P10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTP2K1P10
   Marking Code: TP2K1P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO-220

 HTP2K1P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTP2K1P10 Datasheet (PDF)

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 htp2k1p10.pdf

HTP2K1P10 HTP2K1P10

HTP2K1P10 P-1100V P-Ch Power MOSFETFeature-100 VVDS High Speed Power Switching, Logic Level200RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness-10 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorDrainTO-220GatePart Number Pack

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FMI05N50E

 

 
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