All MOSFET. HTP2K1P10 Datasheet

 

HTP2K1P10 Datasheet and Replacement


   Type Designator: HTP2K1P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO-220
 

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HTP2K1P10 Datasheet (PDF)

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HTP2K1P10

HTP2K1P10 P-1100V P-Ch Power MOSFETFeature-100 VVDS High Speed Power Switching, Logic Level200RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness-10 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorDrainTO-220GatePart Number Pack

Datasheet: HTN027P02 , HTN030N03 , HTN035N04P , HTN036N03P , HTN036P03 , HTN070A03 , HTO350N03 , HTO500P03 , IRF540N , HTS050N03 , HTS060N03 , HTS075P03 , HTS085P03E , HTS110A03 , HTS120N03 , HTS130N04 , HTS130P03Z .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452

Keywords - HTP2K1P10 MOSFET datasheet

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