HTP2K1P10 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTP2K1P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 82 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO-220
HTP2K1P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTP2K1P10 Datasheet (PDF)
htp2k1p10.pdf
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HTP2K1P10 P-1100V P-Ch Power MOSFETFeature-100 VVDS High Speed Power Switching, Logic Level200RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness-10 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorDrainTO-220GatePart Number Pack
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