HTS050N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTS050N03
Marking Code: TS050N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 52 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 217 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: SOIC-8
HTS050N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTS050N03 Datasheet (PDF)
..1. Size:880K cn hunteck
hts050n03.pdf
hts050n03.pdf
HTS050N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, logic level3.9RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability7.1RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness20 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circui
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