All MOSFET. HTS050N03 Datasheet

 

 

HTS050N03 Datasheet and Replacement


   Type Designator: HTS050N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 217 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: SOIC-8
 

 HTS050N03 substitution

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HTS050N03 Datasheet (PDF)

 ..1. Size:880K  cn hunteck
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HTS050N03

HTS050N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, logic level3.9RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability7.1RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness20 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circui

Datasheet: HTN030N03 , HTN035N04P , HTN036N03P , HTN036P03 , HTN070A03 , HTO350N03 , HTO500P03 , HTP2K1P10 , 50N06 , HTS060N03 , HTS075P03 , HTS085P03E , HTS110A03 , HTS120N03 , HTS130N04 , HTS130P03Z , HTS140P03 .

History: IRFAE40

Keywords - HTS050N03 MOSFET datasheet

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 HTS050N03 equivalent finder
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