HTS050N03 Datasheet. Specs and Replacement

Type Designator: HTS050N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 217 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: SOIC-8

HTS050N03 substitution

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HTS050N03 datasheet

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HTS050N03

HTS050N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, logic level 3.9 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 7.1 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 20 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circui... See More ⇒

Detailed specifications: HTN030N03, HTN035N04P, HTN036N03P, HTN036P03, HTN070A03, HTO350N03, HTO500P03, HTP2K1P10, 50N06, HTS060N03, HTS075P03, HTS085P03E, HTS110A03, HTS120N03, HTS130N04, HTS130P03Z, HTS140P03

Keywords - HTS050N03 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.