HTS085P03E MOSFET. Datasheet pdf. Equivalent
Type Designator: HTS085P03E
Marking Code: TS085P03E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 54 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 476 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SOIC-8
HTS085P03E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTS085P03E Datasheet (PDF)
..1. Size:575K cn hunteck
hts085p03e.pdf
hts085p03e.pdf
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