HTS085P03E Datasheet. Specs and Replacement

Type Designator: HTS085P03E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 476 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: SOIC-8

HTS085P03E substitution

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HTS085P03E datasheet

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HTS085P03E

HTS085P03E P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 7 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 12 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -15 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Hard Switching and High Speed Circuit SOIC-8 DC/DC in Telecoms and Indu... See More ⇒

Detailed specifications: HTN036P03, HTN070A03, HTO350N03, HTO500P03, HTP2K1P10, HTS050N03, HTS060N03, HTS075P03, IRF640, HTS110A03, HTS120N03, HTS130N04, HTS130P03Z, HTS140P03, HTS180P03T, HTS200N03, HTS200P03

Keywords - HTS085P03E MOSFET specs

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