All MOSFET. HTS085P03E Datasheet

 

HTS085P03E Datasheet and Replacement


   Type Designator: HTS085P03E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 476 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SOIC-8
 

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HTS085P03E Datasheet (PDF)

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HTS085P03E

HTS085P03E P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level7RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness12RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-15 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecoms and Indu

Datasheet: HTN036P03 , HTN070A03 , HTO350N03 , HTO500P03 , HTP2K1P10 , HTS050N03 , HTS060N03 , HTS075P03 , IRFP460 , HTS110A03 , HTS120N03 , HTS130N04 , HTS130P03Z , HTS140P03 , HTS180P03T , HTS200N03 , HTS200P03 .

History: NVMTS0D6N04C

Keywords - HTS085P03E MOSFET datasheet

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