HTS110A03 Datasheet and Replacement
Type Designator: HTS110A03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 196 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SOIC-8
HTS110A03 substitution
HTS110A03 Datasheet (PDF)
hts110a03.pdf

HTS110A03 P-130V Dual N-Channel Power MOSFETFeature30 VVDS High Speed Power Switching, logic level9.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability14.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeSOIC-8D2D2ApplicationD1D1 Synchronous Rectification in SMPS H
Datasheet: HTN070A03 , HTO350N03 , HTO500P03 , HTP2K1P10 , HTS050N03 , HTS060N03 , HTS075P03 , HTS085P03E , IRF1404 , HTS120N03 , HTS130N04 , HTS130P03Z , HTS140P03 , HTS180P03T , HTS200N03 , HTS200P03 , HTS210C03 .
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