HTS110A03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTS110A03
Marking Code: TS110A03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17.6 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 196 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SOIC-8
HTS110A03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTS110A03 Datasheet (PDF)
..1. Size:842K cn hunteck
hts110a03.pdf
hts110a03.pdf
HTS110A03 P-130V Dual N-Channel Power MOSFETFeature30 VVDS High Speed Power Switching, logic level9.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability14.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeSOIC-8D2D2ApplicationD1D1 Synchronous Rectification in SMPS H
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