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HTS120N03 Spec and Replacement


   Type Designator: HTS120N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: SOIC-8

 HTS120N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTS120N03 Specs

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HTS120N03

HTS120N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, logic level 9.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 14.5 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 12 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circu... See More ⇒

Detailed specifications: HTO350N03 , HTO500P03 , HTP2K1P10 , HTS050N03 , HTS060N03 , HTS075P03 , HTS085P03E , HTS110A03 , IRLZ44N , HTS130N04 , HTS130P03Z , HTS140P03 , HTS180P03T , HTS200N03 , HTS200P03 , HTS210C03 , HTS220C04 .

Keywords - HTS120N03 MOSFET specs

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