All MOSFET. HTS120N03 Datasheet


HTS120N03 MOSFET. Datasheet pdf. Equivalent

   Type Designator: HTS120N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   Maximum Drain Current |Id|: 12 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 6 nS
   Drain-Source Capacitance (Cd): 190 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0115 Ohm
   Package: SOIC-8

 HTS120N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HTS120N03 Datasheet (PDF)

 ..1. Size:895K  cn hunteck

HTS120N03 HTS120N03

HTS120N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, logic level9.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability14.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circu

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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