HTS120N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTS120N03
Marking Code: TS120N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: SOIC-8
HTS120N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTS120N03 Datasheet (PDF)
..1. Size:895K cn hunteck
hts120n03.pdf
hts120n03.pdf
HTS120N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, logic level9.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability14.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circu
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