HTS120N03 Datasheet. Specs and Replacement
Type Designator: HTS120N03 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: SOIC-8
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HTS120N03 substitution
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HTS120N03 datasheet
hts120n03.pdf
HTS120N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, logic level 9.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 14.5 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 12 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circu... See More ⇒
Detailed specifications: HTO350N03, HTO500P03, HTP2K1P10, HTS050N03, HTS060N03, HTS075P03, HTS085P03E, HTS110A03, IRLZ44N, HTS130N04, HTS130P03Z, HTS140P03, HTS180P03T, HTS200N03, HTS200P03, HTS210C03, HTS220C04
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