HTS180P03T MOSFET. Datasheet pdf. Equivalent
Type Designator: HTS180P03T
Marking Code: TS180P03T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 9.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOIC-8
HTS180P03T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTS180P03T Datasheet (PDF)
..1. Size:474K cn hunteck
hts180p03t.pdf
hts180p03t.pdf
P-1HTS180P03T30V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level14RDS(on),typ VGS=10V m EnhancedAvalanche Ruggedness21RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-9.3 AID (Sillicon Limited) Lead Free, HalogenFreeDrainApplication SOIC-8Pin2 Hard Switching and High Speed Circuit22 DC/DCin Teleco
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
