HTS180P03T Datasheet. Specs and Replacement

Type Designator: HTS180P03T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOIC-8

HTS180P03T substitution

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HTS180P03T datasheet

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HTS180P03T

P-1 HTS180P03T 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 14 RDS(on),typ VGS=10V m EnhancedAvalanche Ruggedness 21 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -9.3 A ID (Sillicon Limited) Lead Free, HalogenFree Drain Application SOIC-8 Pin2 Hard Switching and High Speed Circuit 2 2 DC/DCin Teleco... See More ⇒

Detailed specifications: HTS060N03, HTS075P03, HTS085P03E, HTS110A03, HTS120N03, HTS130N04, HTS130P03Z, HTS140P03, AO3400, HTS200N03, HTS200P03, HTS210C03, HTS220C04, HTS240B03, HTS280C03, HTS410P06, HTS450P03

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.