HTS200N03 Datasheet and Replacement
Type Designator: HTS200N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 109 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOIC-8
HTS200N03 substitution
HTS200N03 Datasheet (PDF)
hts200n03.pdf

HTS200N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness9.5 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainSOIC-8 DC/DC in Telecoms and InductrialGateSrcPart Number
hts200p03.pdf

HTS200P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness26RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-10 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecoms and In
Datasheet: HTS075P03 , HTS085P03E , HTS110A03 , HTS120N03 , HTS130N04 , HTS130P03Z , HTS140P03 , HTS180P03T , AON6414A , HTS200P03 , HTS210C03 , HTS220C04 , HTS240B03 , HTS280C03 , HTS410P06 , HTS450P03 , HTS500B03 .
History: P2003BEA
Keywords - HTS200N03 MOSFET datasheet
HTS200N03 cross reference
HTS200N03 equivalent finder
HTS200N03 lookup
HTS200N03 substitution
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History: P2003BEA



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