HTS200N03 Datasheet. Specs and Replacement

Type Designator: HTS200N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 109 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOIC-8

HTS200N03 substitution

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HTS200N03 datasheet

 ..1. Size:889K  cn hunteck
 hts200n03.pdf pdf_icon

HTS200N03

HTS200N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 15.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 9.5 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain SOIC-8 DC/DC in Telecoms and Inductrial Gate Src Part Number ... See More ⇒

 8.1. Size:565K  cn hunteck
 hts200p03.pdf pdf_icon

HTS200N03

HTS200P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 17.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 26 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -10 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Hard Switching and High Speed Circuit SOIC-8 DC/DC in Telecoms and In... See More ⇒

Detailed specifications: HTS075P03, HTS085P03E, HTS110A03, HTS120N03, HTS130N04, HTS130P03Z, HTS140P03, HTS180P03T, IRFB4227, HTS200P03, HTS210C03, HTS220C04, HTS240B03, HTS280C03, HTS410P06, HTS450P03, HTS500B03

Keywords - HTS200N03 MOSFET specs

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