All MOSFET. HTS200N03 Datasheet

 

HTS200N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTS200N03
   Marking Code: TS200N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   Maximum Drain Current |Id|: 9.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 11.5 nC
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 109 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
   Package: SOIC-8

 HTS200N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTS200N03 Datasheet (PDF)

 ..1. Size:889K  cn hunteck
hts200n03.pdf

HTS200N03 HTS200N03

HTS200N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness9.5 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainSOIC-8 DC/DC in Telecoms and InductrialGateSrcPart Number

 8.1. Size:565K  cn hunteck
hts200p03.pdf

HTS200N03 HTS200N03

HTS200P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness26RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-10 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecoms and In

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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