HTS240B03 Datasheet and Replacement
Type Designator: HTS240B03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 208 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOIC-8
HTS240B03 substitution
HTS240B03 Datasheet (PDF)
hts240b03.pdf

HTS240B03 P-130V Dual P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level20.5RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness29RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested-8 AID (Sillicon Limited) Lead Free, Halogen FreeSOIC-8D2D2D1D1Application Hard Switching and High Speed Circuit DC/DC in
Datasheet: HTS130N04 , HTS130P03Z , HTS140P03 , HTS180P03T , HTS200N03 , HTS200P03 , HTS210C03 , HTS220C04 , AON6414A , HTS280C03 , HTS410P06 , HTS450P03 , HTS500B03 , HTS600A06 , HTS600C06 , SFB021N80C3 , SFB021N80I3 .
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