HTS240B03 Specs and Replacement
Type Designator: HTS240B03
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 208 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOIC-8
HTS240B03 substitution
- MOSFET ⓘ Cross-Reference Search
HTS240B03 datasheet
hts240b03.pdf
HTS240B03 P-1 30V Dual P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 20.5 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness 29 RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested -8 A ID (Sillicon Limited) Lead Free, Halogen Free SOIC-8 D2 D2 D1 D1 Application Hard Switching and High Speed Circuit DC/DC in ... See More ⇒
Detailed specifications: HTS130N04 , HTS130P03Z , HTS140P03 , HTS180P03T , HTS200N03 , HTS200P03 , HTS210C03 , HTS220C04 , IRFB4115 , HTS280C03 , HTS410P06 , HTS450P03 , HTS500B03 , HTS600A06 , HTS600C06 , SFB021N80C3 , SFB021N80I3 .
Keywords - HTS240B03 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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