All MOSFET. HTS500B03 Datasheet

 

HTS500B03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTS500B03
   Marking Code: TS500B03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 122 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOIC-8

 HTS500B03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTS500B03 Datasheet (PDF)

 ..1. Size:578K  cn hunteck
hts500b03.pdf

HTS500B03
HTS500B03

HTS500B03 P-130V Dual P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level40RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness65RDS(on),typ VGS=-5V m 100% UIS Tested, 100% Rg Tested-5 AID (Sillicon Limited) Lead Free, Halogen FreeSOIC-8D2D2D1D1Application Hard Switching and High Speed Circuit DC/DC in Tele

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI9948AEY-T1-E3 | APT12057B2LL

 

 
Back to Top