HTS500B03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTS500B03
Marking Code: TS500B03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 122 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOIC-8
HTS500B03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTS500B03 Datasheet (PDF)
hts500b03.pdf
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HTS500B03 P-130V Dual P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level40RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness65RDS(on),typ VGS=-5V m 100% UIS Tested, 100% Rg Tested-5 AID (Sillicon Limited) Lead Free, Halogen FreeSOIC-8D2D2D1D1Application Hard Switching and High Speed Circuit DC/DC in Tele
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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