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HTS500B03 Spec and Replacement


   Type Designator: HTS500B03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 122 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOIC-8

 HTS500B03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTS500B03 Specs

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HTS500B03

HTS500B03 P-1 30V Dual P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 40 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness 65 RDS(on),typ VGS=-5V m 100% UIS Tested, 100% Rg Tested -5 A ID (Sillicon Limited) Lead Free, Halogen Free SOIC-8 D2 D2 D1 D1 Application Hard Switching and High Speed Circuit DC/DC in Tele... See More ⇒

Detailed specifications: HTS200N03 , HTS200P03 , HTS210C03 , HTS220C04 , HTS240B03 , HTS280C03 , HTS410P06 , HTS450P03 , 7N65 , HTS600A06 , HTS600C06 , SFB021N80C3 , SFB021N80I3 , SFB024N100C3 , SFB025N100C3 , SFB027N100C3 , SFB030N100C3 .

Keywords - HTS500B03 MOSFET specs

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