HTS600A06 Datasheet and Replacement
Type Designator: HTS600A06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 67 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOIC-8
HTS600A06 substitution
HTS600A06 Datasheet (PDF)
hts600a06.pdf

HTS600A06 P-160V Dual N-Channel Power MOSFETFeature60 VVDS High Speed Power Switching, logic level50RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability70RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness5 AID 100% UIS Tested, 100% Rg Tested Lead FreeSOIC-8D2D2ApplicationD1D1 Synchronous Rectification in SMPS Hard
hts600c06.pdf

HTS600C06 P-160V Dual N+P Channel Power MOSFETN-CH P-CHFeature60 -60 VVDS High Speed Power Switching, Logic Level60 90RDS(on),max m Enhanced Avalanche Ruggedness5 -4 AID (Sillicon Limited) Lead Free, Halogen FreeSOIC-8D2D2D1D1Application Hard Switching and High Speed Circuit BLDC motorG2S2G1S1D1D2Part Number Package Marking
Datasheet: HTS200P03 , HTS210C03 , HTS220C04 , HTS240B03 , HTS280C03 , HTS410P06 , HTS450P03 , HTS500B03 , AON7408 , HTS600C06 , SFB021N80C3 , SFB021N80I3 , SFB024N100C3 , SFB025N100C3 , SFB027N100C3 , SFB030N100C3 , SFB030N85C3 .
History: SI8410DB | IPB80N06S2L-11 | AP30T10GK
Keywords - HTS600A06 MOSFET datasheet
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History: SI8410DB | IPB80N06S2L-11 | AP30T10GK



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