All MOSFET. HTS600C06 Datasheet

 

HTS600C06 Datasheet and Replacement


   Type Designator: HTS600C06
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SO8
 

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HTS600C06 Datasheet (PDF)

 ..1. Size:1226K  cn hunteck
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HTS600C06

HTS600C06 P-160V Dual N+P Channel Power MOSFETN-CH P-CHFeature60 -60 VVDS High Speed Power Switching, Logic Level60 90RDS(on),max m Enhanced Avalanche Ruggedness5 -4 AID (Sillicon Limited) Lead Free, Halogen FreeSOIC-8D2D2D1D1Application Hard Switching and High Speed Circuit BLDC motorG2S2G1S1D1D2Part Number Package Marking

 8.1. Size:882K  cn hunteck
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HTS600C06

HTS600A06 P-160V Dual N-Channel Power MOSFETFeature60 VVDS High Speed Power Switching, logic level50RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability70RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness5 AID 100% UIS Tested, 100% Rg Tested Lead FreeSOIC-8D2D2ApplicationD1D1 Synchronous Rectification in SMPS Hard

Datasheet: HTS210C03 , HTS220C04 , HTS240B03 , HTS280C03 , HTS410P06 , HTS450P03 , HTS500B03 , HTS600A06 , 7N65 , SFB021N80C3 , SFB021N80I3 , SFB024N100C3 , SFB025N100C3 , SFB027N100C3 , SFB030N100C3 , SFB030N85C3 , SFB032N95C3 .

History: 4N65K

Keywords - HTS600C06 MOSFET datasheet

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