All MOSFET. HTS600C06 Datasheet

 

HTS600C06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTS600C06
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   Maximum Drain Current |Id|: 4 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 7.5 nS
   Drain-Source Capacitance (Cd): 67 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
   Package: SO8

 HTS600C06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTS600C06 Datasheet (PDF)

 ..1. Size:1226K  cn hunteck
hts600c06.pdf

HTS600C06 HTS600C06

HTS600C06 P-160V Dual N+P Channel Power MOSFETN-CH P-CHFeature60 -60 VVDS High Speed Power Switching, Logic Level60 90RDS(on),max m Enhanced Avalanche Ruggedness5 -4 AID (Sillicon Limited) Lead Free, Halogen FreeSOIC-8D2D2D1D1Application Hard Switching and High Speed Circuit BLDC motorG2S2G1S1D1D2Part Number Package Marking

 8.1. Size:882K  cn hunteck
hts600a06.pdf

HTS600C06 HTS600C06

HTS600A06 P-160V Dual N-Channel Power MOSFETFeature60 VVDS High Speed Power Switching, logic level50RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability70RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness5 AID 100% UIS Tested, 100% Rg Tested Lead FreeSOIC-8D2D2ApplicationD1D1 Synchronous Rectification in SMPS Hard

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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