All MOSFET. HTS600C06 Datasheet

 

HTS600C06 Datasheet and Replacement


   Type Designator: HTS600C06
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SO8
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HTS600C06 Datasheet (PDF)

 ..1. Size:1226K  cn hunteck
 hts600c06.pdf pdf_icon

HTS600C06

HTS600C06 P-160V Dual N+P Channel Power MOSFETN-CH P-CHFeature60 -60 VVDS High Speed Power Switching, Logic Level60 90RDS(on),max m Enhanced Avalanche Ruggedness5 -4 AID (Sillicon Limited) Lead Free, Halogen FreeSOIC-8D2D2D1D1Application Hard Switching and High Speed Circuit BLDC motorG2S2G1S1D1D2Part Number Package Marking

 8.1. Size:882K  cn hunteck
 hts600a06.pdf pdf_icon

HTS600C06

HTS600A06 P-160V Dual N-Channel Power MOSFETFeature60 VVDS High Speed Power Switching, logic level50RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability70RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness5 AID 100% UIS Tested, 100% Rg Tested Lead FreeSOIC-8D2D2ApplicationD1D1 Synchronous Rectification in SMPS Hard

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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