All MOSFET. FDSS2407 Datasheet

 

FDSS2407 Datasheet and Replacement


   Type Designator: FDSS2407
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 62 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1200 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SO-8
 

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FDSS2407 Datasheet (PDF)

 ..1. Size:680K  fairchild semi
 fdss2407.pdf pdf_icon

FDSS2407

December 2004FDSS2407 N-Channel Dual MOSFET62V, 3.3A, 132mFeatures General Description 62V, 132m, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions ascompared to a conventional Power MOSFET. These are: 1. 5V Logic Level feedback signal of the drain to sourceA drain to source voltage feedback signal and 2. A gatevoltage. Multiple

 ..2. Size:697K  onsemi
 fdss2407.pdf pdf_icon

FDSS2407

FDSS2407N-Channel Dual MOSFETGeneral Description62V, 3.3A, 132mThis dual N-Channel MOSFET provides added functions ascompared to a conventional Power MOSFET. These are: 1.Features A drain to source voltage feedback signal and 2. A gatedrive disable control function that previously required 62V, 132m, 5V Logic Level Gate Dual MOSFET in SO-8 external discrete circuitry. Incl

Datasheet: FDS9926A , FDS9933BZ , FDS9934C , SDU05N04 , FDS9945 , FDS9953A , FDS9958 , FDS9958F085 , IRF840 , FDT3612 , SDU04N65 , FDT3N40 , SDU04N60 , FDT434P , FDT458P , FDT86102LZ , SDU03N04 .

History: NDPL100N10BG | SQM120N04-1M7L

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