All MOSFET. FDT3612 Datasheet

 

FDT3612 Datasheet and Replacement


   Type Designator: FDT3612
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT223
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FDT3612 Datasheet (PDF)

 ..1. Size:108K  fairchild semi
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FDT3612

March 2001 FDT3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.7 A, 100 V. RDS(ON) = 120 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 130 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Fast switching spe

 ..2. Size:292K  onsemi
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FDT3612

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDS9933BZ , FDS9934C , SDU05N04 , FDS9945 , FDS9953A , FDS9958 , FDS9958F085 , FDSS2407 , IRF540 , SDU04N65 , FDT3N40 , SDU04N60 , FDT434P , FDT458P , FDT86102LZ , SDU03N04 , FDT86106LZ .

History: 2SK2554 | 75329S | PSMNR70-30YLH | HM4806C | RTQ035P02FHA

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