FDT3612 MOSFET Datasheet: N-Ch, 100V, 3.7A. Full specification with pinout and replacement list

FDT3612 Specs and Replacement

Type Designator: FDT3612

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: SOT223

FDT3612 substitution

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FDT3612 datasheet

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March 2001 FDT3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.7 A, 100 V. RDS(ON) = 120 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 130 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Fast switching spe... See More ⇒

..2. Size:292K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDS9933BZ, FDS9934C, SDU05N04, FDS9945, FDS9953A, FDS9958, FDS9958F085, FDSS2407, IRF540N, SDU04N65, FDT3N40, SDU04N60, FDT434P, FDT458P, FDT86102LZ, SDU03N04, FDT86106LZ