All MOSFET. SFB096N200C3 Datasheet

 

SFB096N200C3 Datasheet and Replacement


   Type Designator: SFB096N200C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 135 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 425 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: TO-263
 

 SFB096N200C3 substitution

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SFB096N200C3 Datasheet (PDF)

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SFB096N200C3

SFP098N200C3,SFB096N200C3,SFW097N200C3 N-MOSFET 200V, 8.5m, 135AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 8.5m DS(on) typ. Fast switchingI 135A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems

Datasheet: SFB077N150C2 , SFB082N165C3 , SFB082N68C2 , SFB082N75C2 , SFB082N80DC2 , SFB083N80CC2 , SFB087N120C2 , SFB087N80C2 , IRFZ48N , SFB107N200C3 , SFB120N120B , SFB120N80A , SFB130N150AC2 , SFB132N200C3 , SFB1800N650C2 , SFB205N200C3 , SFB347N100C2 .

History: TPC8012-H | AM110N06-08P | 2SJ485 | RJK0223DNS

Keywords - SFB096N200C3 MOSFET datasheet

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