All MOSFET. SFB096N200C3 Datasheet

 

SFB096N200C3 Datasheet and Replacement


   Type Designator: SFB096N200C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 135 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 425 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: TO-263
      - MOSFET Cross-Reference Search

 

SFB096N200C3 Datasheet (PDF)

 ..1. Size:1237K  cn scilicon
 sfp098n200c3 sfb096n200c3 sfw097n200c3.pdf pdf_icon

SFB096N200C3

SFP098N200C3,SFB096N200C3,SFW097N200C3 N-MOSFET 200V, 8.5m, 135AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 8.5m DS(on) typ. Fast switchingI 135A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SM6A22NSFP | NCE30P12BS | NP180N04TUJ | SSW65R190S2 | SRT10N160LD | SM4186T9RL | APT10021JFLL

Keywords - SFB096N200C3 MOSFET datasheet

 SFB096N200C3 cross reference
 SFB096N200C3 equivalent finder
 SFB096N200C3 lookup
 SFB096N200C3 substitution
 SFB096N200C3 replacement

 

 
Back to Top

 


 
.