All MOSFET. SFB096N200C3 Datasheet

 

SFB096N200C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFB096N200C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 135 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 425 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: TO-263

 SFB096N200C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFB096N200C3 Datasheet (PDF)

 ..1. Size:1237K  cn scilicon
 sfp098n200c3 sfb096n200c3 sfw097n200c3.pdf

SFB096N200C3 SFB096N200C3

SFP098N200C3,SFB096N200C3,SFW097N200C3 N-MOSFET 200V, 8.5m, 135AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 8.5m DS(on) typ. Fast switchingI 135A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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