SFB096N200C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFB096N200C3
Marking Code: 096N200C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 135 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 195 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 425 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
Package: TO-263
SFB096N200C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFB096N200C3 Datasheet (PDF)
..1. Size:1237K cn scilicon
sfp098n200c3 sfb096n200c3 sfw097n200c3.pdf
sfp098n200c3 sfb096n200c3 sfw097n200c3.pdf
SFP098N200C3,SFB096N200C3,SFW097N200C3 N-MOSFET 200V, 8.5m, 135AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 8.5m DS(on) typ. Fast switchingI 135A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
