SFB107N200C3 Datasheet and Replacement
Type Designator: SFB107N200C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 341 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 132 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO-263
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SFB107N200C3 Datasheet (PDF)
sfp110n200c3 sfb107n200c3 sfw107n200c3.pdf

SFP110N200C3,SFB107N200C3,SFW107N200C3 N-MOSFET 200V, 9.4m, 132AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 9.4m DS(on) typ. Fast switchingI 132A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems
sfp110n200c3 sfb107n200c3.pdf

SFP110N200C3, SFB107N200C3 N-MOSFET 200V, 9.1m, 132AFeatureProduct Summary High Speed Power Smooth SwitchingVDS200V Enhanced Body diode dv/dt capabilityRDS(on)9.1m Enhanced Avalanche RuggednessID 132AApplication 100% DVDS Tested Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WML36N65C4 | HLML6401 | SI7880ADP | SWC1N60 | IRFSZ40 | SSF1122D | AP85T03GH-HF
Keywords - SFB107N200C3 MOSFET datasheet
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History: WML36N65C4 | HLML6401 | SI7880ADP | SWC1N60 | IRFSZ40 | SSF1122D | AP85T03GH-HF



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