SFB107N200C3 Datasheet. Specs and Replacement

Type Designator: SFB107N200C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 341 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 132 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm

Package: TO-263

SFB107N200C3 substitution

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SFB107N200C3 datasheet

 ..1. Size:1151K  cn scilicon
 sfp110n200c3 sfb107n200c3 sfw107n200c3.pdf pdf_icon

SFB107N200C3

SFP110N200C3,SFB107N200C3,SFW107N200C3 N-MOSFET 200V, 9.4m , 132A Features Product Summary Low on resistance V 200V DS Low gate charge R 9.4m DS(on) typ. Fast switching I 132A D(Silicon Limited) High avalanche current Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems ... See More ⇒

 ..2. Size:5135K  cn scilicon
 sfp110n200c3 sfb107n200c3.pdf pdf_icon

SFB107N200C3

SFP110N200C3, SFB107N200C3 N-MOSFET 200V, 9.1m , 132A Feature Product Summary High Speed Power Smooth Switching VDS 200V Enhanced Body diode dv/dt capability RDS(on) 9.1m Enhanced Avalanche Ruggedness ID 132A Application 100% DVDS Tested Synchronous Rectification in SMPS 100% Avalanche Tested Hard Switching and High Speed Circuit 100% Avalanche Tested... See More ⇒

Detailed specifications: SFB082N165C3, SFB082N68C2, SFB082N75C2, SFB082N80DC2, SFB083N80CC2, SFB087N120C2, SFB087N80C2, SFB096N200C3, IRF1405, SFB120N120B, SFB120N80A, SFB130N150AC2, SFB132N200C3, SFB1800N650C2, SFB205N200C3, SFB347N100C2, SFB60N100

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