All MOSFET. SFB107N200C3 Datasheet

 

SFB107N200C3 Datasheet and Replacement


   Type Designator: SFB107N200C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 341 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 132 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
   Package: TO-263
 

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SFB107N200C3 Datasheet (PDF)

 ..1. Size:1151K  cn scilicon
 sfp110n200c3 sfb107n200c3 sfw107n200c3.pdf pdf_icon

SFB107N200C3

SFP110N200C3,SFB107N200C3,SFW107N200C3 N-MOSFET 200V, 9.4m, 132AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 9.4m DS(on) typ. Fast switchingI 132A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems

 ..2. Size:5135K  cn scilicon
 sfp110n200c3 sfb107n200c3.pdf pdf_icon

SFB107N200C3

SFP110N200C3, SFB107N200C3 N-MOSFET 200V, 9.1m, 132AFeatureProduct Summary High Speed Power Smooth SwitchingVDS200V Enhanced Body diode dv/dt capabilityRDS(on)9.1m Enhanced Avalanche RuggednessID 132AApplication 100% DVDS Tested Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested

Datasheet: SFB082N165C3 , SFB082N68C2 , SFB082N75C2 , SFB082N80DC2 , SFB083N80CC2 , SFB087N120C2 , SFB087N80C2 , SFB096N200C3 , IRF9640 , SFB120N120B , SFB120N80A , SFB130N150AC2 , SFB132N200C3 , SFB1800N650C2 , SFB205N200C3 , SFB347N100C2 , SFB60N100 .

History: APT75F50B2 | GP2M004A060XG

Keywords - SFB107N200C3 MOSFET datasheet

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