All MOSFET. SFB107N200C3 Datasheet

 

SFB107N200C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFB107N200C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 341 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 132 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
   Package: TO-263

 SFB107N200C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFB107N200C3 Datasheet (PDF)

 ..1. Size:1151K  cn scilicon
 sfp110n200c3 sfb107n200c3 sfw107n200c3.pdf

SFB107N200C3 SFB107N200C3

SFP110N200C3,SFB107N200C3,SFW107N200C3 N-MOSFET 200V, 9.4m, 132AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 9.4m DS(on) typ. Fast switchingI 132A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems

 ..2. Size:5135K  cn scilicon
 sfp110n200c3 sfb107n200c3.pdf

SFB107N200C3 SFB107N200C3

SFP110N200C3, SFB107N200C3 N-MOSFET 200V, 9.1m, 132AFeatureProduct Summary High Speed Power Smooth SwitchingVDS200V Enhanced Body diode dv/dt capabilityRDS(on)9.1m Enhanced Avalanche RuggednessID 132AApplication 100% DVDS Tested Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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