SFB107N200C3 Datasheet and Replacement
Type Designator: SFB107N200C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 341 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 132 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO-263
SFB107N200C3 substitution
SFB107N200C3 Datasheet (PDF)
sfp110n200c3 sfb107n200c3 sfw107n200c3.pdf

SFP110N200C3,SFB107N200C3,SFW107N200C3 N-MOSFET 200V, 9.4m, 132AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 9.4m DS(on) typ. Fast switchingI 132A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems
sfp110n200c3 sfb107n200c3.pdf

SFP110N200C3, SFB107N200C3 N-MOSFET 200V, 9.1m, 132AFeatureProduct Summary High Speed Power Smooth SwitchingVDS200V Enhanced Body diode dv/dt capabilityRDS(on)9.1m Enhanced Avalanche RuggednessID 132AApplication 100% DVDS Tested Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested
Datasheet: SFB082N165C3 , SFB082N68C2 , SFB082N75C2 , SFB082N80DC2 , SFB083N80CC2 , SFB087N120C2 , SFB087N80C2 , SFB096N200C3 , NCEP15T14 , SFB120N120B , SFB120N80A , SFB130N150AC2 , SFB132N200C3 , SFB1800N650C2 , SFB205N200C3 , SFB347N100C2 , SFB60N100 .
History: WML10N65D1B | JCS9N50VC | BL10N40-A | RUH40140M | FDB0105N407L | SMN03T80IS | STF16N60M6
Keywords - SFB107N200C3 MOSFET datasheet
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History: WML10N65D1B | JCS9N50VC | BL10N40-A | RUH40140M | FDB0105N407L | SMN03T80IS | STF16N60M6



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